Stable perovskite module interconnects

ABSTRACT

Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.

RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 16/255,396 filed on Jan. 23, 2019 which claims the priority ofU.S. Provisional Application No. 62/757,619 filed Nov. 8, 2018, both ofwhich are incorporated herein by reference.

BACKGROUND Field

Embodiments described herein relate to solar cells, and moreparticularly to interconnect structures for perovskite solar cellmodules.

Background Information

Photovoltaic cells, also referred to solar cells, are devices thatconvert radiant photo energy into electrical energy. Multiple solarcells may be integrated into a group to constitute a solar panel, ormodule, in which the solar cells are usually connected in seriescreating an additive voltage.

Monocrystalline solar cells are dominant in the current solar cellindustry, offering some of the highest efficiencies and lifetimes.However, the cost associated monocrystalline solar cells is a drivingfactor in the development of alternative solar cell technologies. Oneclass of development is thin-film solar cells. Thin-film solar cells areattractive due to the potential to implement economical in-lineprocesses of deposition and patterning sequences. As thin-film solarcells continue to improve in efficiency they may be candidates todisplace currently adopted monocrystalline solar cells at a reducedcost, or create new solar cell markets. Furthermore, some thin-filmsolar cells can be flexible with potential applications on curvedsurfaces, mobile devices, or other components. Two such emergingthin-film technologies include cadmium telluride (CdTe) and copperindium gallium selenide (CIGS). More recently perovskite solar cellshave gained attention with a rapid surge in reported cell efficiency.

SUMMARY

Thin-film solar cell modules and serial cell-to-cell interconnectstructures and methods of fabrication are described. In particularembodiments describe structures and fabrication sequences that mayprotect the integrity of the subcell absorber material, such as ametal-halide perovskite, from decomposition and allow the integration ofadjacent metal layers.

In an embodiment a solar cell module includes a bottom electrode layerwith a plurality of first patterned line openings, a subcell layer overthe bottom electrode layer, the subcell layer including a plurality ofsecond patterned line openings, a conformal transport layer over subcelllayer and laterally surrounding an outside perimeter the subcell layer,and a patterned top electrode layer over the conformal transport layer.The conformal transport layer may encapsulate the subcell layer toprevent perovskite-metal contact and perovskite decomposition. In anembodiment, a non-metallic intermediate layer, which may be an insulatorlayer, is located between the conformal transport layer and the subcelllayer, with the non-metallic intermediate layer laterally surroundingthe outside perimeter of the subcell layer. In such a configuration theconformal transport layer may also surround an outside perimeter of thenon-metallic intermediate layer.

In an embodiment, a solar cell interconnect includes a bottom electrodelayer on a substrate, a first patterned line opening P1 in the bottomelectrode layer, a subcell layer over the bottom electrode layer andwithin the first patterned line opening P1, a second patterned lineopening P2 in the subcell layer, a non-metallic intermediate layer alongsidewalls of the second patterned line opening P2, a conformal transportlayer over the subcell layer, on the non-metallic intermediate layerwithin the second patterned line opening P2 and over the bottomelectrode layer within the second patterned line opening P1, and a topelectrode layer over the conformal transport layer and on the conformaltransport layer within the second patterned line opening P2. A thirdpatterned line opening P3 may additionally be formed through at leastthe top electrode layer.

In an embodiment, a solar cell interconnect includes a bottom electrodelayer, a first patterned line opening P1 in the bottom electrode layer,a subcell layer over the bottom electrode layer, a second patterned lineopening P2 in the subcell layer, a conductive plug within P2, aconformal transport layer over the subcell layer and the conductiveplug, a top electrode layer over the conformal transport layer, and athird patterned line opening P3 in the top electrode layer. Theconductive plug may substantially fill P2 in an embodiment. In anotherembodiment, a non-metallic intermediate layer may be formed along asingle sidewall of P2. More specifically, the non-metallic intermediatelayer may be formed along a single sidewall of P1 that is shared withP1.

In an embodiment, a solar cell interconnect includes a bottom electrodelayer, a first patterned line opening P1 in the bottom electrode layer,a subcell layer over the bottom electrode layer, a conformal transportlayer over the subcell layer, a top electrode layer over the conformaltransport layer, and a second patterned line opening P2 through the topelectrode layer, the conformal transport layer and the subcell layer. Aconductive plug is located within the second patterned line opening. Inanother embodiment, a non-metallic intermediate layer may be formedalong one or more sidewalls of P2.

The top electrode layer in accordance with embodiments may include ametal layer. The conformal transport layer may provide a physicalbarrier between the subcell layer and top electrode layer. Additionally,various configurations are possible for forming a third patterned lineopening P3 in the top electrode layer to avoid metal contact with thesubcell layer. In some embodiments the top electrode layer may bepatterned with a shadow mask. In some embodiments the top electrodelayer and underlying layers may be patterned by scribing through the topelectrode layer and into underlying layers. The P3 scribe may be filledwith a non-electrically conductive. The P3 scribe may possibly extendinto the non-metallic intermediate layer. In some embodiments P1 and P2do not overlap. In other embodiments, P2 overlaps P1.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic top view illustration of a solar cell module inaccordance with embodiments.

FIGS. 2A-2D are schematic top view illustrations of a method offabricating a solar cell module in accordance with embodiments.

FIG. 3A is an illustrative diagram of solar cell stack-up in accordancewith embodiments.

FIG. 3B is an illustrative diagram of tandem solar cell stack-up inaccordance with embodiments.

FIG. 4A is an illustrative diagram of solar cell stack-up in accordancewith embodiments.

FIG. 4B is an illustrative diagram of tandem solar cell stack-up inaccordance with embodiments.

FIG. 5A is a schematic cross-sectional side view illustration of aninterconnect with printed non-metallic intermediate layer within asubcell patterned line opening and masked top electrode layer inaccordance with an embodiment.

FIG. 5B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.3A in accordance with an embodiment.

FIG. 6A is a schematic cross-sectional side view illustration of avariation of the interconnect of FIG. 5A with scribed cells inaccordance with an embodiment.

FIGS. 6B-6C are schematic cross-sectional side view illustrations ofvariations of the interconnect of FIG. 5A with a printed non-metallicintermediate layer within an offset subcell patterned line opening inaccordance with an embodiment.

FIG. 7 is flow chart illustrating a method of forming the interconnectof FIG. 5A in accordance with an embodiment.

FIGS. 8A-8I are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 5A in accordance with anembodiment.

FIG. 9A is a schematic cross-sectional side view illustration of aninterconnect with a transport layer within a subcell patterned lineopening in accordance with an embodiment.

FIG. 9B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.9A in accordance with an embodiment.

FIG. 10 is flow chart illustrating a method of forming the interconnectof FIG. 9A in accordance with an embodiment.

FIGS. 11A-11D are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 9A in accordance with anembodiment.

FIG. 12A is a schematic cross-sectional side view illustration of aninterconnect with overlapping bottom electrode and subcell patternedline openings in accordance with an embodiment.

FIG. 12B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.12A in accordance with an embodiment.

FIG. 13 a schematic cross-sectional side view illustration of avariation of the interconnect of FIG. 12A with a scribed cell inaccordance with an embodiment.

FIG. 14 is flow chart illustrating a method of forming the interconnectof FIG. 12A in accordance with an embodiment.

FIGS. 15A-15H are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 12A in accordance with anembodiment.

FIG. 16A is a schematic cross-sectional side view illustration of aninterconnect with a conductive plug in a subcell patterned line openingin accordance with an embodiment.

FIG. 16B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.16A in accordance with an embodiment.

FIG. 17 is a schematic cross-sectional side view illustration of avariation of the interconnect of FIG. 16A with scribed cells inaccordance with an embodiment.

FIG. 18 is flow chart illustrating a method of forming the interconnectof FIG. 16A in accordance with an embodiment.

FIGS. 19A-19D are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 16A in accordance with anembodiment.

FIGS. 20A-20B are schematic cross-sectional side view illustrations ofan interconnect with a printed non-metallic intermediate layer andconductive plug within a subcell patterned line opening in accordancewith an embodiment.

FIG. 20C is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including an interconnect of FIG.20A-20B in accordance with an embodiment.

FIG. 21 is a schematic cross-sectional side view illustration of avariation of the interconnect of FIG. 20A with scribed cells inaccordance with an embodiment.

FIG. 22 is flow chart illustrating a method of forming the interconnectof FIG. 20A in accordance with an embodiment.

FIGS. 23A-23F are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 20A in accordance with anembodiment.

FIGS. 24A-24B are schematic cross-sectional side view illustrations ofan interconnect with a printed non-metallic intermediate layer andconductive plug within a subcell patterned line opening in accordancewith an embodiment.

FIG. 24C is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including an interconnect of FIG.24A-24B in accordance with an embodiment.

FIG. 25 is flow chart illustrating a method of forming the interconnectsof FIGS. 24A-24B in accordance with embodiments.

FIGS. 26A-26C are schematic cross-sectional side view illustrations of amethod of forming the interconnects of FIGS. 26A-26B in accordance withembodiments.

DETAILED DESCRIPTION

Embodiments describe interconnect structure for thin film solar cellmodules, and in particular metal-halide perovskite-based solar cells. Invarious aspects, embodiments describe interconnect structures andthin-film fabrication methods that allow for economical in-lineprocessing sequences, and the use of a metal rear electrode, which canprovide rear reflection for light harvesting, low cost, and highconductivity. It has been observed that the performance and stability ofmetal-halide perovskite-based solar cells are highly susceptible tometal induced degradation caused by halide-metal interactions.Specifically, metal electrodes may react with halides in the perovskiteand act as a sink for halides and corrosion of the metal electrode,degrading conductivity. In accordance with various embodiments, solarcell module interconnect structures are described in which a conformaltransport layer may also function as a barrier layer to preventperovskite-metal contact and the damage of the subcell structure.Furthermore, the interconnect structures in accordance with embodimentsmay act to prevent the ingress of moisture and oxygen and egress ofvolatile organic components, which may significantly increase thestability of metal-halide perovskite-based solar cells.

In various embodiments, description is made with reference to figures.However, certain embodiments may be practiced without one or more ofthese specific details, or in combination with other known methods andconfigurations. In the following description, numerous specific detailsare set forth, such as specific configurations, dimensions andprocesses, etc., in order to provide a thorough understanding of theembodiments. In other instances, well-known processes and manufacturingtechniques have not been described in particular detail in order to notunnecessarily obscure the embodiments. Reference throughout thisspecification to “one embodiment” means that a particular feature,structure, configuration, or characteristic described in connection withthe embodiment is included in at least one embodiment. Thus, theappearances of the phrase “in one embodiment” in various placesthroughout this specification are not necessarily referring to the sameembodiment. Furthermore, the particular features, structures,configurations, or characteristics may be combined in any suitablemanner in one or more embodiments.

The terms “over”, “to”, “between”, and “on” as used herein may refer toa relative position of one layer with respect to other layers. One layer“over”, or “on” another layer or in “contact” with another layer may bedirectly in contact with the other layer or may have one or moreintervening layers. One layer “between” layers may be directly incontact with the layers or may have one or more intervening layers.

Referring now to FIG. 1 a schematic top view illustration is provided ofa solar cell module in accordance with embodiments. As shown, the module100 includes a plurality of cells 120 (also referred to as solar cells)coupled in series with interconnects 130, with the front of one cellconnected to the rear of the next cell so that their voltages (V₁ . . .V_(n)) add. The plurality of cells 120 may be arranged into one or moresubsets 110 (e.g. strings) coupled in parallel, which may have theeffect of decreasing total module voltage.

A thin-film solar cell 120 commonly includes a subcell between twoelectrodes, at least one of which being transparent. As described inmore detail with regard to FIGS. 3A-3B and FIGS. 4A-4B, the subcell maycommonly include an absorber layer and one or more transport layers(e.g. hole transport, electron transport). The subcells in accordancewith embodiments can include a single junction, or a multiple junctionstructure with multiple absorber layers. In order to minimize loss duelimited conductivity of the transparent electrode, the module is dividedinto the plurality of smaller cells 120 which are electrically connectedin series. The serial interconnect methodologies in accordance withembodiments may generally include a plurality of patterned line openings(P1, P2, P3, etc.) to form interconnects 130, such as a first patternedline opening P1 through a bottom electrode, a second patterned lineopening P2 through the subcell which includes the absorber and transportlayer(s), and a third patterned line opening P3 through a top/rearelectrode to electrically isolate adjacent cells 120.

Referring now to FIGS. 2A-2D, schematic top view illustrations areprovided of a method of fabricating a solar cell module 100 inaccordance with embodiments. As shown in FIG. 2A, the sequence may beginwith the formation of one or more bottom electrode layers 210 on asubstrate. In the particular embodiment illustrated two bottom electrodelayers 210 are illustrated for the fabrication of two subsets 110 thatmay be coupled in parallel as described with regard to FIG. 1. Eachbottom electrode layer 210 includes an outside perimeter 214 and may bepatterned to form first patterned line openings P1. A subcell layer 220may then be formed over the patterned bottom electrode layer 210,followed by patterning of second patterned line openings P2 asillustrated in FIG. 2B. As shown, the subcell layer 220 may optionallybe wider than the bottom electrode layer 210 such that it surrounds thebottom electrode layer. In some embodiments, the outside perimeter 224of the subcell layer 220 may be aligned with the outside perimeter 214of the bottom electrode layer 210, or laterally surround the outsideperimeter 224 of the subcell layer. Alternatively, the subcell layer 220may have the same width of the bottom electrode layer 210, which mayprovide encapsulation function for the subcell layer 220. Referring nowto FIG. 2C a conformal transport layer is formed over the subcell layers220. This may be a single transport layer or multiple layerscorresponding to the subcell layers. In accordance with embodiments, acontinuous conformal transport layer 240 is formed over the subcelllayer 220 and second patterned line openings P2 that separate theindividual cells 120. The conformal transport layer 240 may function totransport charge through its thickness, and not be laterally conductiveso as to not short adjacent cells 120. In an embodiment, the conformaltransport layer 240 is characterized by a resistivity greater than 0.1ohm·cm.

It has been observed that perovskite materials are prone todecomposition at elevated temperatures, and in particular the A-sitecation of ABX₃ metal-halide perovskites. Additionally, perovskitematerials are highly susceptible to metal induced degradation caused byhalide-metal interactions. In accordance with embodiments, a conformaltransport layer 240 may be used to protect against either ofdecomposition and metal induced degradation due to diffusion from ametal electrode. In accordance with embodiments, the conformal transportlayer 240 may encapsulate a subcell layer 220 that includes a perovskitematerial absorber layer. In an embodiment, the conformal transport layer240 laterally surrounds the outside perimeter 224 of the subcell layer220, or at least the perovskite material absorber layer of the subcelllayer 220. The conformal transport layer 240 may also be formed withinthe patterned line openings P2 in the subcell layer 220. Following theformation of the conformal transport layer 240, a patterned topelectrode layer 250 is formed over the conformal transport layer 240 asillustrated in FIG. 2D, with the third patterned line openings P3 thoughthe top electrode layer 250 separating top electrodes of adjacent cells120.

In an embodiment, a solar cell module 100 includes a bottom electrodelayer 210 including a plurality of first patterned line openings P1, asubcell layer 220 over the bottom electrode layer 210, the subcell layer220 including a plurality of second patterned line openings P2, aconformal transport layer 240 over subcell layer 220 and laterallysurrounding an outside perimeter 224 the subcell layer 220, and apatterned top electrode layer 250 over the conformal transport layer240. In an embodiment, the patterned top electrode layer 250 includes ametal layer, and the bottom electrode layer 210 a transparent material.Exemplary transparent bottom electrode materials includepoly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS),transparent conductive oxides (TCOs) such as indium tin oxide (ITO),fluorine doped tin oxide (FTO), indium zinc oxide (IZO), aluminum dopedzinc oxide (AZO), cadmium stannate, etc. In an embodiment, anon-metallic intermediate layer is located between the conformaltransport layer 240 and the subcell layer 220, the non-metallicintermediate layer laterally surrounding the outside perimeter 224 ofthe subcell layer 220. In an embodiment, the conformal transport layer240 is additionally located within the plurality of second patternedline openings P2. Exemplary conformal transport layer materials includeoxides (e.g. metal oxides), nitrides (e.g. metal nitrides), polymers,and small molecules. Exemplary metal oxides may be titanium oxide, zincoxide, tin oxide, nickel oxide, vanadium oxide, tungsten oxide, indiumoxide, any of which may be doped. For example, some TCOs may be ITO,AZO, IZO cadmium stannate. Exemplary metal nitrides include at leasttitanium nitride and tungsten nitride. Some exemplary polymers includepoly(triaryl amine) (PTAA) and polyaniline. Some exemplary smallmolecules include2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-MeOTAD), and fullerenes. In an embodiment, the conformaltransport layer is less than 1,000 nm thick, such as less than 150 nmthick, or more specifically less than 50 nm thick such as 10-40 nmthick. In a specific implementation, the conformal transport layer 240is formed of aluminum doped zinc oxide (AZO). The aluminum dopingconcentration need not create a high conductivity, and instead may besufficient to only pass charge through its thickness, as opposed tolaterally. In this aspect, the conformal transport layer in accordancewith embodiments can function more as a barrier as opposed to conductor.For example, aluminum dopant concentration with an AZO conformaltransport layer 240 may be less than the aluminum dopant concentrationwith an AZO bottom electrode layer 210. Morphology can also be differentcompared to an AZO electrode layer. In embodiment, a conformal transportlayer 240 in accordance with embodiments containing AZO may beamorphous, while an AZO electrode layer may be crystalline in order toprovide long range mobility and less defects. The conformal transportlayer 240 in accordance with embodiments may function to pass chargebetween the electrodes, yet have a sufficient resistivity to not shortacross a patterned electrode layer. Furthermore, the conformal transportlayer 240 may encapsulate the subcell layer (e.g. metal-halideperovskite) to prevent perovskite-metal contact and perovskitedecomposition.

Various exemplary solar cell 120 stack-ups are illustrated in FIGS.3A-4B. FIG. 3A is an illustrative diagram of single junction solar cellstack-up in accordance with an embodiment. As illustrated, the solarcell 120 may include a bottom electrode layer 210, a top electrode layer250, and a subcell layer 220 between the bottom and top electrodelayers. Additionally, a conformal transport layer 240 may be formed onthe subcell layer 220. The subcell layer 200 includes an absorber layer320 and one or more transport layers. In the embodiment illustrated, thesubcell layer 200 includes an electron transport layer (ETL) 310 overthe bottom electrode, an absorber layer 320 over the ETL 310, and anoptional first hole transport layer (HTL) 330 over the absorber layer320. The conformal transport layer 240 may also function as an HTL inthis configuration, and physically separate the top electrode layer 250from the subcell layer 220, and specifically from the absorber layer320. In a specific embodiment, bottom electrode layer 210 is formed of atransparent material such as ITO, ETL 310 is formed of a n-type metaloxide such as titanium oxide, and the absorber layer 320 is aperovskite-based material. In an embodiment, optional HTL 330 is formedof PTAA or spiro-MeOTAD, while the conformal transport layer 240 isformed of a metal oxide such as vanadium oxide or tungsten oxide. In anembodiment, the top electrode layer 250 includes one or more metallayers, such as Ag, Cu, Al, Au, etc.

FIG. 3B is an illustrative diagram of tandem solar cell stack-up inaccordance with embodiments. The tandem structure may include multipleabsorber layers, which may be the same or different materials. In thespecific embodiment described the tandem structure is aperovskite-perovskite tandem structure, though embodiments are not solimited. Electrode layer 210, ETL 310, and absorber layer 320, and HTL330 may be similar as described with regard to FIG. 3A. Similarly, ETL350 may be similar to ETL 310, absorber layer 360 similar to absorberlayers 320, and HTL 370 similar to HTL 330. Notably, while absorberlayers 320, 360 may be formed of similar perovskite-based materials,they may be tuned for different bandgaps. A recombination layer 350 maybe located between the stacked subcells, between ETL 350 and HTL 330.Recombination layer 350 may be a transparent conducting layer such as aTCO, or ITO specifically. Conformal transport layer 240 and topelectrode layer 250 may additionally be formed similarly as with regardto FIG. 3A.

Referring now to FIGS. 4A-4B, FIG. 4A is an illustrative diagram ofsolar cell stack-up in accordance with an embodiment, and FIG. 4B is anillustrative diagram of tandem solar cell stack-up in accordance with anembodiment. FIGS. 4A-4B are similar to the structures of FIGS. 3A-3B,with the order of electron and hole transport layers being flipped. Thischange in order of layer formation may additionally change materialsselection of layers. In an embodiment, HTL 320 is formed of a metaloxide such as nickel oxide. ETL 310 may be a single layer or multiplelayers. In an embodiment of FIG. 4A, ETL 310 is formed of a fullerene,with the conformal transport layer 240 including a transparent metaloxide such a tin oxide or AZO. In an embodiment of FIG. 4B, ETL 310 mayinclude multiple layers, for example a transparent metal oxide such astin oxide or AZO formed over a fullerene layer. Other layers illustratedmay be similar as described with regard to FIGS. 3A-3B.

Referring now to FIG. 5A a schematic cross-sectional side viewillustration is provided of an interconnect with printed non-metallicintermediate layer in accordance with an embodiment. Specifically, FIG.5A illustrates the interconnect between serial cells 120, and additivevoltages V1, V2 as shown in FIG. 1. The solar cell interconnect mayinclude a bottom electrode layer 210 on a substrate 202, a firstpatterned line opening P1 in the bottom electrode layer 210, a subcelllayer 220 over the bottom electrode layer 210 and within the firstpatterned line opening P1, a second patterned line opening P2 in thesubcell layer 220, a non-metallic intermediate layer 230 along sidewallsof the second patterned line opening P2, a conformal transport layer 240over the subcell layer 220, on the non-metallic intermediate layer 230within the second patterned line opening P2 and over the bottomelectrode layer 210 within the second patterned line opening P1, and atop electrode layer 250 over the conformal transport layer 240 and onthe conformal transport layer 240 within the second patterned lineopening P2. The conformal transport layer 240 illustrated in FIG. 5A maybe a continuous layer over and between multiple adjacent cells 110,illustrated by the additive voltages V1 and V2. The conformal transportlayer 240 may also be continuous past outside perimeter 224 the subcelllayer 220 as shown in FIG. 5B. In the embodiment illustrated, an openingmay be formed in the non-metallic intermediate layer that exposes a topsurface 211 the bottom electrode layer 210. For example, thenon-metallic intermediate layer 230 may be formed of a non-electricallyconductive material and the conformal transport layer 240 is in directcontact with the bottom electrode layer 210 in the second patterned lineopening P2.

In an embodiment, the top electrode layer 250 includes a metal layer,while the bottom electrode layer 210 is formed of a transparentmaterial. In a particular embodiment, the subcell layer 220 includes aperovskite absorber layer. The subcell layer 220 may be a single celllayer, or include multiple subcells. For example, the subcell layer 220can include a tandem structure including multiple subcells. Theconformal transport layer 240 may function to encapsulate and protectthe subcell layer 220, for example from decomposition and metaldiffusion. Exemplary materials include oxides (e.g. metal oxides),nitrides (e.g. metal nitrides), polymers, and small molecules. Exemplarymetal oxides may be titanium oxide, zinc oxide, tin oxide, nickel oxide,vanadium oxide, tungsten oxide, indium oxide, any of which may be doped.For example, some TCOs may be ITO, AZO, IZO cadmium stannate. Exemplarymetal nitrides include at least titanium nitride and tungsten nitride.Some exemplary polymers include poly(triaryl amine) (PTAA) andpolyaniline. Some exemplary small molecules include2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-MeOTAD), and fullerenes. Suitable deposition techniques to form aconformal layer may include chemical vapor deposition (CVD), atomiclayer deposition (ALD), solution coating and evaporation. In anembodiment, the conformal transport layer is less than 1,000 nm thick,such as less than 150 nm thick, or more specifically less than 50 nmthick such as 10-40 nm thick. The conformal transport layer may bedoped. For example, the conformal transport layer may be AZO. Theconformal transport layer may be sufficiently thin to transport chargethrough its thickness and not be laterally conductive. The conformaltransport layer 240 may be characterized by a resistivity greater than0.1 ohm·cm. The conformal transport layer may prevent metal diffusion,and function as an electron transport layer or hole transport layer forthe solar cell 120.

Still referring to FIG. 5A, the solar cell interconnect may include athird patterned line opening P3 in the top electrode layer 250. In theparticular embodiment illustrated the third patterned line opening P3does not completely extend through a thickness of the conformaltransport layer 240 so that the conformal transport layer can protectthe underlying subcell layer 220.

FIG. 5B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.5A in accordance with an embodiment. In the embodiment illustrated, thesolar cell module may include a bottom electrode layer 210 including aplurality of first patterned line openings, a subcell layer 220 over thebottom electrode layer 210, the subcell layer including a plurality ofsecond patterned line openings, a conformal transport layer 240 oversubcell layer and laterally surrounding an outside perimeter 224 thesubcell layer 220, and a patterned top electrode layer 250 over theconformal transport layer 240. In the embodiment illustrated, anon-metallic intermediate layer 230 is located between the conformaltransport layer 240 and the subcell layer 220, and the non-metallicintermediate layer 230 laterally surrounds the outside perimeter 224 ofthe subcell layer 220. Additionally, the conformal transport layer 240may also surround an outside perimeter 234 of the non-metallicintermediate layer 230.

Several variations of the embodiments illustrated in FIGS. 5A-5B arecontemplated. For example, referring to FIG. 6A, the third patternedline opening P3 may partially or completely extend through any of thetop electrode layer 250, the conformal transport layer 240, and thesubcell layer 220. As shown, a non-electrically conductive material 260can fill the third patterning line opening P3. For example, thenon-electrically conductive material 260 may be a polymer, metal oxide,or nitride material and may function to prevent metal degradation fromwhere the conformal transport layer 240 is interrupted by the thirdpatterned line opening P3. In an embodiment the non-electricallyconductive material 260 and the non-metallic intermediate layer 230 areformed of the same material.

Another alternative is illustrated in FIG. 6B, where rather than forminga separate non-electrically conductive material in the third patternedline opening P3, the non-metallic intermediate layer 230 thickness maybe offset within the second patterned line opening P2. In this case, thethird patterned line opening P3 extends through a thickness of thenon-metallic intermediate layer 230 rather than the subcell layer 220 inorder to provide further protection of the subcell layer 220 to thirdpatterned line opening P3. In such an embodiment, it may not benecessary to provide a further insulating material within the thirdpatterned line opening P3. In the embodiments illustrated in FIGS.6A-6B, the third patterned line opening P3 may extend through thepreviously continuous conformal transport layer 240. FIGS. 6A-6Billustrate alternatively in which the break is prepared by anon-electrically conductive material 260 or pre-existing non-metallicintermediate layer 230. Alternatively, or additionally, a continuousprotective layer may be formed over the entire device stack. FIG. 6Cprovides an additional alternative to that illustrated in FIG. 6B, inwhich the non-metallic intermediate layer 230 is underneath the thirdpatterned line opening P3 as a precaution, even though the thirdpatterned line opening P3 does not extend into the non-metallicintermediate layer 230.

Referring now to FIGS. 7-8I, FIG. 7 is flow chart illustrating a methodof forming the interconnect of FIG. 5A in accordance with an embodiment.FIGS. 8A-8I are schematic cross-sectional side view illustrations of amethod of forming the interconnect of FIG. 5A in accordance with anembodiment. In the following description, the processing sequence ofFIG. 7 is made with regard to the cross-sectional side viewillustrations of FIGS. 8A-8I. In interests of conciseness, and to notoverly obscure embodiments the processing sequence variations to for theembodiments illustrated in FIGS. 6A-6C are not separately illustrated,and instead are described together along with FIGS. 7-8I. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

As shown in FIG. 8A the processing sequence may begin with a substrate202. Substrate 202 may be a single or multiple layer substrate,including one or more layers of glass, plastic, or conductive metalfoil. The bottom electrode layer 210 may then be formed on substrate 202as illustrated in FIG. 8B. Bottom electrode layer 210 may be formed ofmaterials such as cadmium stannate, TCOs, including ITO, FTO, IZO, etc.Referring now to FIG. 8C, at operation 710 a first patterned lineopening P1 is then formed in the bottom electrode layer 210. Variouspatterning techniques such as mechanical or laser scribing, chemicaletching, or deposition with a shadow mask can be used to form P1. In anembodiment, mechanical or laser scribing is utilized in a roll-to-rollmanufacturing process.

The subcell layer 220 is then formed over the patterned bottom electrodelayer 210 at operation 720, as shown in FIG. 8D. The subcell layer 220generally includes a subcell including an absorber layer and one or moretransport layers. In an embodiment, the subcell layer includes anabsorber layer between a hole transport layer and an electron transportlayer. The subcell layer 220 may include a single subcell, or multiplesubcells such as with a tandem structure. In accordance withembodiments, the subcell layer 220 includes one or more absorber layersincluding a perovskite material. In an embodiment, the subcell layer 220includes a tandem structure including a perovskite material in one orboth of the subcells. For example, a tandem perovskite cell structuremay include two subcells with perovskite absorber layers with differentbandgaps. Perovskite materials may be characterized by the formula ABX₃,with A representing a large atomic or molecular cation (e.g. Cs,methylammonium, formamidinium, etc.), with B representing a positivelycharged cation (e.g. metal, lead, plumbate, Sn), and X representing anegatively charged anion (e.g. halide, I, Br, Cl).

The subcell layer 220 is then patterned to form a second patterned lineopening P2 at operation 730, as illustrated in FIG. 8E. Variouspatterning techniques such as mechanical or laser scribing, chemicaletching, or deposition with a shadow mask can be used to form P2. In anembodiment, mechanical or laser scribing is utilized due to chemicalstability of the perovskite absorber layer(s). Referring now to FIGS.8F-G, at operation 740 a non-metallic intermediate layer 230 is formedalong sidewalls 222 of P2. In the specific embodiment illustrated, thenon-metallic intermediate layer 230 is first applied to fill P2 using aprinting technique such as ink jet, extrusion, spraying, etc. Thenon-metallic intermediate layer 230 is formed of a non-metallic materialthat does not react with the absorber layer(s). In an embodiment, thenon-metallic intermediate layer includes an insulator material. In anembodiment, the non-metallic intermediate layer includes a polymer suchas, but are not limited to, poly(methyl methacrylate) (PMMA) andpoly(vinyl alcohol) (PVA). As shown in FIG. 8G, the non-metallicintermediate layer 230 is patterned to form an opening 231 that mayexpose the bottom electrode layer 210. For example, this patterning mayutilize a mechanical or laser scribing.

In the particular embodiment illustrated in FIG. 8G, opening 231substantially aligns with the middle of P2 such that lateral thicknessesof the non-metallic intermediate layer 230 on opposite sidewalls 222 aresubstantially the same. However, embodiments are not so limited. Forexample, in a processing sequence to create the interconnect structureof FIG. 6B or FIG. 6C, the opening 231 and P2 may be offset, withdifferent lateral thicknesses of the non-metallic intermediate layer 230on opposite sidewalls 222.

Referring now to FIG. 8H, at operation 750 a conformal transport layer240 is formed over the subcell layer 220, on the non-metallicintermediate layer within P2, and over the bottom electrode layer withinP2. The conformal transport layer 240 may be continuous. The conformaltransport layer 240 may function to encapsulate and protect the subcelllayer 220, for example from decomposition and metal diffusion. Exemplarymaterials include oxides (e.g. metal oxides), nitrides (e.g. metalnitrides), polymers, and small molecules. Exemplary metal oxides may betitanium oxide, zinc oxide, tin oxide, nickel oxide, vanadium oxide,tungsten oxide, indium oxide, any of which may be doped. For example,some TCOs may be ITO, AZO, IZO cadmium stannate. Exemplary metalnitrides include at least titanium nitride and tungsten nitride. Someexemplary polymers include poly(triaryl amine) (PTAA) and polyaniline.Some exemplary small molecules include2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene(spiro-MeOTAD), and fullerenes. Suitable deposition techniques to form aconformal layer may include chemical vapor deposition (CVD), atomiclayer deposition (ALD), solution coating and evaporation. In anembodiment, the conformal transport layer is less than 1,000 nm thick,such as less than 150 nm thick, or more specifically less than 50 nmthick such as 10-40 nm thick. The conformal transport layer may bedoped. For example, the transport layer may be AZO. The conformaltransport layer may be sufficiently thin to transport charge through itsthickness, and not be laterally conductive. The conformal transportlayer 240 may be characterized by a resistivity greater than 0.1 ohm·cm.In an embodiment, the conformal transport layer also functions as anelectron transport layer for the solar cell 120. Alternatively, theconformal transport layer may function as a hole transport layer for thesolar cell 120.

In an embodiment, an AZO containing conformal transport layer 240 isformed using ALD or low temperature CVD to form an amorphous layer. Thelow temperature deposition process may not provide necessary conditionsfor crystal growth. This may be in contrast to a high temperatureprocess (e.g. high temperature sputter and anneal) used for theformation of a crystalline AZO layer for use as an electrode layer.

The top electrode layer 250 may then be formed over the conformaltransport layer and on the conformal transport layer within P2 atoperation 760 as illustrated in FIG. 8I. In a particular embodiment, thetop electrode layer 250 is deposited through a shadow mask to form thethird patterned line opening P3 during deposition. This may protectunderlying layers from solution processing operation. Suitabledeposition technique may include evaporation, sputter, printing, andspraying. In an embodiment, the top electrode layer 250 includes one ormore metal layers, such as Ag, Cu, Al, Au, etc.

In an embodiment scribing is utilized to form P3 in the top electrodelayer 250. In the embodiments illustrated in FIGS. 6B-6C, thenon-metallic intermediate layer 230 is located underneath P3, or P3extends into or completely through the non-metallic intermediate layer230. Either configuration may provide protection for the absorberlayer(s). In the embodiment illustrated in FIG. 6A, scribing can be usedto form P3 partially or completely through any of the top electrodelayer 250, conformal transport layer 240, and subcell layer 220. In suchan embodiment, P3 is partially or fully filled with an insulatingmaterial 260 to provide protection for the absorber layer(s).

In the foregoing description, specific processing techniques andmaterials selections have been provided. It is to be appreciated thatthat the specific processing techniques and materials selections mayalso be applied to the following embodiments described with regard toFIGS. 9A-26C. Accordingly, in interest of conciseness, detaileddiscussion of specific processing techniques and materials selectionsmay not be repeated.

FIG. 9A is a schematic cross-sectional side view illustration of aninterconnect with a conformal transport layer within a subcell patternedline opening in accordance with an embodiment. As shown, the solar cellinterconnect may include a bottom electrode layer 210 on a substrate202, a first patterned line opening P1 in the bottom electrode layer210, a subcell layer 220 over the bottom electrode layer 210 and withinthe first patterned line opening P1, a second patterned line opening P2in the subcell layer 220, a non-metallic intermediate layer 235 alongsidewalls of the second patterned line opening P2, a conformal transportlayer 240 over the subcell layer 220, on the non-metallic intermediatelayer 235 within the second patterned line opening P2 and over thebottom electrode layer 210 within the second patterned line opening P1,and a top electrode layer 250 over the conformal transport layer 240 andon the conformal transport layer 240 within the second patterned lineopening P2. The conformal transport layer 240 may be continuous. In theembodiment illustrated, the non-metallic intermediate layer 235 is athin insulator layer or nucleation layer that is globally formed. In anembodiment, non-metallic intermediate layer 235 is less than 10 nmthick, such as 1-5 nm thick. As shown, the non-metallic intermediatelayer 235 may physically separate the conformal transport layer 240 frombottom electrode layer 210. In accordance with embodiment, thenon-metallic intermediate layer 235 is formed of a material selectedfrom the group consisting of an insulator, semiconductor, and carbon.The non-metallic intermediate layer 235 may be sufficiently thin toallow the transport of charge. Additionally, conformality of thenon-metallic intermediate layer may facilitate uniform and dense growthof a subsequent conformal transport layer 240. In an embodiment, thenon-metallic intermediate layer 235 includes OH groups to help nucleatethe growth of a metal oxide containing conformal transport layer 240.Ethoxylated polyethyleneimine (PETE) and polyvinyl alcohol (PVA) havesuch OH groups. The non-metallic intermediate layer 235 may also beformed of materials such as polyvinyl phenol and polystyrene. In analternative embodiment, the non-metallic intermediate layer 235 may bepatterned to expose the bottom electrode layer 210 similarly asnon-metallic intermediate layer 230 previously described.

FIG. 9B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.9A in accordance with an embodiment. In the embodiment illustrated, thesolar cell module may include a bottom electrode layer 210 including aplurality of first patterned line openings, a subcell layer 220 over thebottom electrode layer 210, the subcell layer including a plurality ofsecond patterned line openings, a conformal transport layer 240 oversubcell layer and laterally surrounding an outside perimeter 224 thesubcell layer 220, and a patterned top electrode layer 250 over theconformal transport layer 240. In the embodiment illustrated, anon-metallic intermediate layer 235 is located between the conformaltransport layer 240 and the subcell layer 220, and the non-metallicintermediate layer 235 laterally surrounds the outside perimeter 224 ofthe subcell layer 220. Additionally, the conformal transport layer 240may also surround an outside perimeter 238 of the non-metallicintermediate layer 235.

Referring now to FIGS. 10-11D, FIG. 10 is flow chart illustrating amethod of forming the interconnect of FIG. 9A in accordance with anembodiment. FIGS. 11A-11D are schematic cross-sectional side viewillustrations of a method of forming the interconnect of FIG. 9A inaccordance with an embodiment. In the following description, theprocessing sequence of FIG. 10 is made with regard to thecross-sectional side view illustrations of FIGS. 11A-11D. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

The processing sequence may begin similarly as with that of FIG. 7. Atoperation 1010 a first patterned line opening P1 is formed in the bottomelectrode layer 210. At operation 1020 the subcell layer 220 is formedover the patterned bottom electrode layer 210. Referring to FIG. 11A thesubcell layer 220 is then patterned to form a second patterned lineopening P2 at operation 730. Referring to FIG. 11B, at operation 1040 anon-metallic intermediate layer 235 is formed along sidewalls 222 of P2and over the top surface of the bottom electrode layer 210. Thenon-metallic intermediate layer 235 may be formed directly on the topsurface 211 of the bottom electrode layer 210. Alternatively, thenon-metallic intermediate layer 235 may be patterned similarly asnon-metallic intermediate layer 230 to expose the bottom electrode layer210. In accordance with embodiments, non-metallic intermediate layer 235may be a nucleation layer or insulator layer less than 10 nm thick. Atsuch a thickness, the thin non-metallic intermediate layer may be thinenough to allow the passage of charge through either conduction ortunneling. Thus, the non-metallic intermediate layer 235 may be aconformal layer, with thickness less than 10 nm along sidewalls 222 ofP2, and on the top surface 211 of the bottom electrode layer 210. Thenon-metallic intermediate layer may be deposited using a suitableprinting technique such as spraying, evaporation and vapor transportdeposition. If the non-metallic intermediate layer 235 is formed of aninsulator or organic material, it may aid in the nucleation or adhesionof the subsequently formed conformal transport layer. The non-metallicintermediate layer 235 may be formed of a non-metallic material thatdoes not react with the absorber layer(s), such as an insulator,semiconductor, and carbon. In the embodiment illustration, thenon-metallic intermediate layer 235 is a conformal layer in order tocover the entire surface and aid in nucleation.

Referring now to FIG. 11C, at operation 1050 a conformal transport layer240 is formed over the subcell layer 220, on the non-metallicintermediate layer within P2. The conformal transport layer 240 mayfunction to encapsulate and protect the subcell layer 220, for examplefrom decomposition and metal diffusion. Suitable deposition techniquesto form a conformal layer may include chemical vapor deposition (CVD),atomic layer deposition (ALD), solution coating and evaporation. In anembodiment, the conformal transport layer is less than 1,000 nm thick,such as less than 150 nm thick, or more specifically less than 50 nmthick such as 10-40 nm thick. The conformal transport layer may bedoped. For example, the transport layer may be AZO. The conformaltransport layer may be sufficiently thin to transport charge through itsthickness, and not be laterally conductive. The conformal transportlayer 240 may be characterized by a resistivity greater than 0.1 ohm·cm.In an embodiment, the conformal transport layer also functions as anelectron transport layer or hole transport layer for a solar cell 120.

The top electrode layer 250 may then be formed over the conformaltransport layer and on the conformal transport layer within P2 atoperation 1060 as illustrated in FIG. 11D. In a particular embodiment,the top electrode layer 250 is deposited through a shadow mask to formthe third patterned line opening P3 during deposition. This may protectunderlying layers from solution processing operation. Suitabledeposition technique may include evaporation, sputter, printing, andspraying. In an embodiment, the top electrode layer 250 includes one ormore metal layers, such as Ag, Cu, Al, Au, etc. While not separatelyillustrated, in an alternative embodiment scribing could be performed tocreate P3 similarly as described and illustrated with regard to FIG. 6A,followed by at least partially filling with a non-electricallyconductive material 260.

FIG. 12A is a schematic cross-sectional side view illustration of aninterconnect with overlapping bottom electrode and subcell patternedline openings in accordance with an embodiment. As shown, a solar cellinterconnect may include a bottom electrode layer 210 on a substrate202, a first patterned line opening P1 in the bottom electrode layer210, a subcell layer 220 over the bottom electrode layer 210 and withinthe first patterned line opening P1, a second patterned line opening P2in the subcell layer 220, a non-metallic intermediate layer 235 alongsidewalls of the second patterned line opening P2, a conformal transportlayer 240 over the subcell layer 220, on the non-metallic intermediatelayer 235 within the second patterned line opening P2 and over thebottom electrode layer 210 within the second patterned line opening P1,and a top electrode layer 250 over the conformal transport layer 240 andon the conformal transport layer 240 within the second patterned lineopening P2. The conformal transport layer 240 may be continuous. In theembodiment illustrated, P2 overlaps P1. Also shown, are the non-metallicintermediate layer 230 formed along one sidewall 222 of P2 and on thesubstrate 202 inside of P1, and the non-metallic intermediate layer 230formed along the opposite sidewall 222 of P2 and on the bottom electrodelayer 210. An opening in the non-metallic intermediate layer 230 exposesa top surface the bottom electrode layer. The conformal transport layer240 of the embodiment illustrated in FIG. 12A may be in direct contactwith the bottom electrode layer 210.

FIG. 12B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.12A in accordance with an embodiment. Similar to the embodimentillustrated in FIG. 5B, the solar cell module may include a bottomelectrode layer 210 including a plurality of first patterned lineopenings, a subcell layer 220 over the bottom electrode layer 210, thesubcell layer including a plurality of second patterned line openings, aconformal transport layer 240 over subcell layer and laterallysurrounding an outside perimeter 224 the subcell layer 220, and apatterned top electrode layer 250 over the conformal transport layer240. In the embodiment illustrated, a non-metallic intermediate layer230 is located between the conformal transport layer 240 and the subcelllayer 220, and the non-metallic intermediate layer 230 laterallysurrounds the outside perimeter 224 of the subcell layer 220.Additionally, the conformal transport layer 240 may also surround anoutside perimeter 234 of the non-metallic intermediate layer 230.

Several variations of the embodiments illustrated in FIGS. 12A-12B arecontemplated. For example, referring to FIG. 13, the third patternedline opening P3 may partially or completely extend through any of thetop electrode layer 250, the conformal transport layer 240, and thesubcell layer 220. As shown, a non-electrically conductive material 260can fill the third patterning line opening P3. For example, thenon-electrically conductive material 260 may be a polymer, metal oxide,or nitride material and may function to prevent metal degradation fromwhere the conformal transport layer 240 is interrupted by the thirdpatterned line opening P3. In an embodiment the non-electricallyconductive material 260 and the non-metallic intermediate layer 230 areformed of the same material.

Referring now to FIGS. 14-15H, FIG. 14 is flow chart illustrating amethod of forming the interconnect of FIG. 12A in accordance with anembodiment. FIGS. 15A-15H are schematic cross-sectional side viewillustrations of a method of forming the interconnect of FIG. 12A inaccordance with an embodiment. In the following description, theprocessing sequence of FIG. 14 is made with regard to thecross-sectional side view illustrations of FIGS. 15A-15H. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

Referring to FIG. 15A a bottom electrode layer 210 may first be formedon a substrate 202, followed by the formation of subcell layer 220 asillustrated in FIG. 15B. At operation 1410, a first patterned lineopening P1 is formed through the subcell layer 220, and bottom electrodelayer 210. At operation 1420 a second patterned line opening P2 isformed in the subcell layer 220, where P2 overlaps P1. P2 may be widerthan P1. Additionally, P2 and P1 may share a same sidewall 222 in thesubcell layer 220.

Referring now to FIGS. 15E-15F, at operation 1430 a non-metallicintermediate layer 230 is formed along sidewalls 222 of P2. In thespecific embodiment illustrated, the non-metallic intermediate layer 230is first applied to fill P2 using a printing technique such as ink jet,extrusion, spraying, etc. The non-metallic intermediate layer 230 isformed of a non-metallic material that does not react with the absorberlayer(s), such as a polymer, carbon or carbon/polymer blend. In anembodiment, the non-metallic intermediate layer is an insulatingmaterial. As shown in FIG. 15F, the non-metallic intermediate layer 230is patterned to form an opening 231 that may expose the bottom electrodelayer 210 and optionally substrate 202. For example, this patterning mayutilize laser scribing. In the particular embodiment illustrated in FIG.15F, opening 231 substantially aligns with the middle of P2 such thatlateral thicknesses of the non-metallic intermediate layer 230 onopposite sidewalls 222 are substantially the same. However, embodimentsare not so limited.

Referring now to FIG. 15G, at operation 1440 a conformal transport layer240 is formed over the subcell layer 220, and on the non-metallicintermediate layer 230 within P2. In an embodiment, the conformaltransport layer 240 is formed on the top surface of the bottom electrode210. The conformal transport layer 240 may also be formed within P1. Theconformal transport layer 240 may function to encapsulate and protectthe subcell layer 220, for example from decomposition and metaldiffusion. Suitable deposition techniques to form a conformal layer mayinclude chemical vapor deposition (CVD), atomic layer deposition (ALD),solution coating and evaporation. In an embodiment, the conformaltransport layer is less than 1,000 nm thick, such as less than 150 nmthick, or more specifically less than 50 nm thick such as 10-40 nmthick. The conformal transport layer may be doped. For example, thetransport layer may be AZO. The conformal transport layer may besufficiently thin to transport charge through its thickness, and not belaterally conductive. The conformal transport layer 240 may becharacterized by a resistivity greater than 0.1 ohm·cm. In anembodiment, the conformal transport layer also functions as an electrontransport layer or hole transport layer for a solar cell 120.

The top electrode layer 250 may then be formed over the conformaltransport layer and on the conformal transport layer within P2 atoperation 1450 as illustrated in FIG. 15H. In a particular embodiment,the top electrode layer 250 is deposited through a shadow mask to formthe third patterned line opening P3 during deposition. This may protectunderlying layers from solution processing operation. Suitabledeposition technique may include evaporation, sputter, printing, andspraying. In an embodiment, the top electrode layer 250 includes one ormore metal layers, such as Ag, Cu, Al, Au, etc. In the alternativeembodiment illustrated in FIG. 13, scribing could be performed to createP3 similarly as described and illustrated with regard to FIG. 6A,followed by at least partially filling with a non-electricallyconductive material 260.

FIG. 16A is a schematic cross-sectional side view illustration of aninterconnect with a conductive plug in a subcell patterned line openingin accordance with an embodiment.

As shown, the solar cell interconnect may include a bottom electrodelayer 210, a first patterned line opening P1 in the bottom electrodelayer 210, a subcell layer 220 over the bottom electrode layer, a secondpatterned line opening P2 in the subcell layer 220, a conductive plug270 within P2, a conformal transport layer 240 over the subcell layer220 and the conductive plug 270, a top electrode layer 250 over theconformal transport layer 240, and a third patterned line opening P3 inthe top electrode layer 250. The conformal transport layer 240 may becontinuous. In the embodiment illustrated, P3 does not completely extendthrough a thickness of the conformal transport layer 240.

FIG. 16B is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including the interconnect of FIG.16A in accordance with an embodiment. Similar to the embodimentillustrated in FIG. 5B, the solar cell module may include a bottomelectrode layer 210 including a plurality of first patterned lineopenings, a subcell layer 220 over the bottom electrode layer 210, thesubcell layer including a plurality of second patterned line openings, aconformal transport layer 240 over subcell layer and laterallysurrounding an outside perimeter 224 the subcell layer 220, and apatterned top electrode layer 250 over the conformal transport layer240.

Several variations of the embodiments illustrated in FIGS. 16A-16B arecontemplated. For example, referring to FIG. 17, the third patternedline opening P3 may partially or completely extend through any of thetop electrode layer 250, the conformal transport layer 240, and thesubcell layer 220. As shown, a non-electrically conductive material 260can fill the third patterning line opening P3. For example, thenon-electrically conductive material 260 may be a polymer, metal oxide,or nitride material and may function to prevent metal degradation fromwhere the conformal transport layer 240 is interrupted by the thirdpatterned line opening P3.

Referring now to FIGS. 18-19D, FIG. 18 is flow chart illustrating amethod of forming the interconnect of FIG. 16A in accordance with anembodiment. FIGS. 19A-19D are schematic cross-sectional side viewillustrations of a method of forming the interconnect of FIG. 16A inaccordance with an embodiment. In the following description, theprocessing sequence of FIG. 18 is made with regard to thecross-sectional side view illustrations of FIGS. 19A-19D. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

The processing sequence may begin similarly as with that of FIG. 7. Atoperation 1810 a first patterned line opening P1 is formed in the bottomelectrode layer 210. At operation 1820 the subcell layer 220 is formedover the patterned bottom electrode layer 210. Referring to FIG. 19A thesubcell layer 220 is then patterned to form a second patterned lineopening P2 at operation 1830. Referring to FIG. 19B, at operation 1040an (electrically) conductive plug 270 is formed within P2 and on thebottom electrode layer 210. The conductive plug 270 may be formed ofmaterials that do not react with the absorber layer(s), such as carbonor a carbon/polymer blend, printed ITO nanoparticles or other TCOnanoparticles. The conductive plug 270 may be formed using a suitableprinting technique such as ink jet, extrusion, spraying, etc. so thatfurther patterning is not necessary. A conductivity of the conductiveplug 270 in accordance with embodiments may only be greater than about0.001 S/cm due to the short distance of the interconnection based on thethin film thickness in the 0.1-5 μm range. Such a low conductivity canbe achieved by a range of materials that do not react with theperovskite such as carbon (bulk conductivity around 1-100 S/cm) and ITOnanoparticles. In an embodiment, the conductive plug 270 includesparticles dispersed in a matrix (e.g. polymer matrix). The carbon and/orTCO particles can be mixed into a polymer blend in order to make iteasier to suspend the carbon or TCO nanoparticles in a solvent anddeposit the interconnects through a printing technique like ink jet orspraying. Due to the low conductivity required, a very high conductiveparticle to polymer ratio is not required. Such a polymer could be abinder like poly(vinylidene fluoride) (PVDF), polyvinyl fluoride,polyvinylchloride, polystyrene, PMMA, PVA, polyvinyl phenol,polyethylene glycol, etc. The carbon may be graphite or carbon black inan embodiment, but could include graphene or carbon nanotubes oramorphous carbon. The TCO particles may be ITO or IZO nanoparticles withdiameters between 10-200 nm in an embodiment, but could be AZO, Sb:SnO₂,zinc tin oxide, cadmium stannate and could be microparticles withdiameters between 0.2-2 μm.

Referring now to FIG. 19C, at operation 1850 a conformal transport layer240 is formed over the subcell layer 220 and over the electricallyconductive plug 270 within P2. The conformal transport layer 240 mayfunction to encapsulate and protect the subcell layer 220, for examplefrom decomposition and metal diffusion. Suitable deposition techniquesto form a conformal layer may include chemical vapor deposition (CVD),atomic layer deposition (ALD), solution coating and evaporation. In anembodiment, the conformal transport layer is less than 150 nm thick, ormore specifically less than 50 nm thick such as 10-20 nm thick. Theconformal transport layer may be doped. For example, the transport layermay be AZO. The conformal transport layer may be sufficiently thin totransport charge through its thickness, and not be laterally conductive.The conformal transport layer 240 may be characterized by a resistivitygreater than 0.1 ohm·cm. In an embodiment, the conformal transport layeralso functions as an electron transport layer to the subcell layer 220.

The top electrode layer 250 may then be formed over the conformaltransport layer 240 at operation 1860 as illustrated in FIG. 19D. In aparticular embodiment, the top electrode layer 250 is deposited througha shadow mask to form the third patterned line opening P3 duringdeposition. This may protect underlying layers from solution processingoperation. Suitable deposition technique may include evaporation,sputter, printing, and spraying. In an embodiment, the top electrodelayer 250 includes one or more metal layers, such as Ag, Cu, Al, Au,etc. In an alternative embodiment illustrated in FIG. 17, scribing couldbe performed to create P3 similarly as described and illustrated withregard to FIG. 6A, followed by at least partially filling with anon-electrically conductive material 260.

FIG. 20A is a schematic cross-sectional side view illustration of aninterconnect with a conductive plug in a subcell patterned line openingin accordance with an embodiment.

As shown, the solar cell interconnect may include a bottom electrodelayer 210, a first patterned line opening P1 in the bottom electrodelayer 210, a subcell layer 220 over the bottom electrode layer, a secondpatterned line opening P2 in the subcell layer 220, a conductive plug270 within P2, a conformal transport layer 240 over the subcell layer220 and the conductive plug 270, a top electrode layer 250 over theconformal transport layer 240, and a third patterned line opening P3 inthe top electrode layer 250. The conformal transport layer 240 may becontinuous. P3 may not completely extend through a thickness of theconformal transport layer 240. In the particular embodiment illustratedP2 overlaps P1. Additionally, a non-metallic intermediate layer 230 maybe formed along a single sidewall 222 of P2. Non-metallic intermediatelayer 230 may be formed of the same materials as the non-metallicintermediate layer 230 previously described. More specifically, thenon-metallic intermediate layer 230 may be formed along a singlesidewall 222 of P1 that is shared with P1. The non-metallic intermediatelayer 230 may be formed within P1. Additionally, P3 may optionallyoverlap P2.

In the particular embodiment illustrated in FIG. 20A, a lateral edge 232of the non-metallic intermediate layer 230 is over the bottom electrodelayer 210. The lateral edge 232 may be located elsewhere in accordancewith embodiments. For example, the variation illustrated in FIG. 20Bshows lateral edge 232 located within P1.

FIG. 20C is a schematic cross-sectional side view illustration of edgeencapsulation of a solar cell module including an interconnect of FIG.20A-20B in accordance with an embodiment. Similar to the embodimentillustrated in FIG. 5B, the solar cell module may include a bottomelectrode layer 210 including a plurality of first patterned lineopenings, a subcell layer 220 over the bottom electrode layer 210, thesubcell layer including a plurality of second patterned line openings, aconformal transport layer 240 over subcell layer and laterallysurrounding an outside perimeter 224 the subcell layer 220, and apatterned top electrode layer 250 over the conformal transport layer240. In the embodiment illustrated, a non-metallic intermediate layer230 is located between the conformal transport layer 240 and the subcelllayer 220, and the non-metallic intermediate layer 230 laterallysurrounds the outside perimeter 224 of the subcell layer 220.Additionally, the conformal transport layer 240 may also surround anoutside perimeter 284 of the non-metallic intermediate layer 230.

Several variations of the embodiments illustrated in FIGS. 20A-20C arecontemplated. For example, referring to FIG. 21, the third patternedline opening P3 may partially or completely extend through any of thetop electrode layer 250, the conformal transport layer 240, and thesubcell layer 220. As shown, a non-electrically conductive material 260can fill the third patterning line opening P3. For example, thenon-electrically conductive material 260 may be a polymer, metal oxide,or nitride material and may function to prevent metal degradation fromwhere the conformal transport layer 240 is interrupted by the thirdpatterned line opening P3. In an embodiment the non-electricallyconductive material 260 and the non-metallic intermediate layer 230 areformed of the same material.

Referring now to FIGS. 22-23F, FIG. 22 is flow chart illustrating amethod of forming the interconnect of FIG. 19A in accordance with anembodiment. FIGS. 23A-23F are schematic cross-sectional side viewillustrations of a method of forming the interconnect of FIG. 20A inaccordance with an embodiment. In the following description, theprocessing sequence of FIG. 22 is made with regard to thecross-sectional side view illustrations of FIGS. 23A-23F. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

The processing sequence may begin similarly as with that of FIG. 7. Atoperation 2210 a first patterned line opening P1 is formed in the bottomelectrode layer 210. At operation 2220 the subcell layer 220 is formedover the patterned bottom electrode layer 210 as shown in FIG. 23A.Referring to FIG. 23B the subcell layer 220 is then patterned to form asecond patterned line opening P2 at operation 2230. Referring to FIG.23C, at operation 2240 a non-metallic intermediate layer 230 is formedalong a sidewall 222 of P2. Non-metallic intermediate layer 230 may beformed along a single sidewall 222 in accordance with an embodiment, andas described with regard to FIG. 20A. In an embodiment, non-metallicintermediate layer 230 is a polymer material such as, but not limitedto, poly(methyl methacrylate) (PMMA), poly(vinyl alcohol) (PVA), andpolystyrene. Non-metallic intermediate layer 230 may be formed using asuitable printing technique such as ink jet, extrusion, spraying, etc.In an embodiment, opening 281 exists between a sidewall 232 of thenon-metallic intermediate layer 230 and a sidewall 222 of P2. Opening281 may expose the bottom electrode 210.

Referring now to FIG. 23D, at operation 2250 a conductive plug 270 isformed within P2, or more specifically within opening 281 within P2.Conductive plug 20 may fill opening 281 between the non-metallicintermediate layer 230 and the sidewall 222 P2 that is laterallyopposite the sidewall 222 which is covered by non-metallic intermediatelayer 230. In an embodiment, conductive plug 270 is in contact with thebottom electrode layer 210. Conductive plug 270 may optionally be formedover the non-metallic intermediate layer 230. The conductive plug 270may be formed of materials that do not react with the absorber layer(s),such as carbon or a carbon/polymer blend, ITO nanoparticles, and TCOnanoparticles. The conductive plug 270 may be formed using a suitableprinting technique such as ink jet, extrusion, spraying, etc. so thatfurther patterning is not necessary.

Referring now to FIG. 23E, at operation 2260 a conformal transport layer240 is formed over the subcell layer 220 and over the electricallyconductive plug 270 within P2. The conformal transport layer 240 mayfunction to encapsulate and protect the subcell layer 220, for examplefrom decomposition and metal diffusion. Suitable deposition techniquesto form a conformal layer may include chemical vapor deposition (CVD),atomic layer deposition (ALD), solution coating and evaporation. In anembodiment, the conformal transport layer is less than 1,000 nm thick,such as less than 150 nm thick, or more specifically less than 50 nmthick such as 10-40 nm thick. The conformal transport layer may bedoped. For example, the transport layer may be AZO. The conformaltransport layer may be sufficiently thin to transport charge through itsthickness, and not be laterally conductive. The conformal transportlayer 240 may be characterized by a resistivity greater than 0.1 ohm·cm.In an embodiment, the conformal transport layer also functions as anelectron transport layer or hole transport layer for a solar cell 120.

The top electrode layer 250 may then be formed over the conformaltransport layer 240 at operation 2270 as illustrated in FIG. 23F. In aparticular embodiment, the top electrode layer 250 is deposited througha shadow mask to form the third patterned line opening P3 duringdeposition. This may protect underlying layers from solution processingoperation. Suitable deposition technique may include evaporation,sputter, printing, and spraying. In an embodiment, the top electrodelayer 250 includes one or more metal layers, such as Ag, Cu, Al, Au,etc. In an alternative embodiment illustrated in FIG. 21, scribing couldbe performed to create P3 similarly as described and illustrated withregard to FIG. 6A, followed by at least partially filling with anon-electrically conductive material 260.

FIGS. 24A-24B are schematic cross-sectional side view illustrations ofan interconnect with a printed non-metallic intermediate layer andconductive plug within a subcell patterned line opening in accordancewith an embodiment. FIG. 24C is a schematic cross-sectional side viewillustration of edge encapsulation of a solar cell module including aninterconnect of FIG. 24A-24B in accordance with an embodiment. As shown,the solar cell interconnect may include a bottom electrode layer 210, afirst patterned line opening P1 in the bottom electrode layer, a subcelllayer 220 over the bottom electrode layer 210, a conformal transportlayer 240 over the subcell layer 220, a top electrode layer 250 over theconformal transport layer 240, and a second patterned line opening P2through the top electrode layer 250, the conformal transport layer 240and the subcell layer 220. A conductive plug 270 is formed within thesecond patterned line opening P2 to make electrical connection betweenthe top electrode layer 250 of one cell and the bottom electrode layer210 of an adjacent cell. The second patterned line opening P2 mayoverlap the first patented line opening P1. For example, P2 maycompletely overlap P1 and be wider than P1.

The conformal transport layer 240 may be a continuous layer prior topatterning of P2. Referring to FIG. 24C, the conformal transport layer240 may laterally surround the outside perimeter 224 of the subcelllayer 220, and optionally outside perimeter 214 of the bottom electrodelayer 210. The solar cell interconnect may further include anon-metallic intermediate layer 230 along one or more sidewalls of thesecond patterned line opening P2. For example, this may be sidewalls 222of the subcell layer 220, as well as sidewalls of the conformaltransport layer 240 and top electrode layer 250. In the embodimentillustrated in FIG. 24A a third patterned line opening P3 is formed inthe conductive plug 270 within the second line opening P2. The thirdpatterned line opening P3 may expose the bottom electrode layer 210. Inthe embodiment illustrated in FIG. 24B the non-metallic intermediatelayer 230 is formed on both laterally opposite sidewalls of the secondpatterned line opening P2, and a third patterned line opening P3 isformed in the non-metallic intermediate layer 230. The third patternedline opening P3 extends into the second patterned line opening P2, andthe conductive plug 20 fills the third patterned line opening P3 in thenon-metallic intermediate layer. In accordance with embodiments, the topelectrode layer 250 of FIGS. 24A-24C can include metal layer, and thebottom electrode layer 210 can include a transparent material.

Referring now to FIGS. 25-26C, FIG. 25 is flow chart illustrating amethod of forming the interconnects of FIGS. 24A-24B in accordance withembodiments. FIGS. 26A-26C are schematic cross-sectional side viewillustrations of a method of forming the interconnects of FIG. 24A-24Bin accordance with embodiments. In the following description, theprocessing sequence of FIG. 25 is made with regard to thecross-sectional side view illustrations of FIGS. 26A-26C. Additionally,it is understood that certain embodiments may be practiced without oneor more of these specific details, or in combination with other knownmethods and configurations described herein.

The processing sequence may begin similarly as with that of FIG. 7. Atoperation 2510 a first patterned line opening P1 is formed in the bottomelectrode layer 210. At operation 2520 the subcell layer 220 is formedover the patterned bottom electrode layer 210. At operation 2530 aconformal transport layer 240 is formed over the subcell layer, and atoperation 2540 a top electrode layer 250 is formed over the conformaltransport layer 240 as illustrated in FIG. 26A. The conformal transportlayer 240 may function to encapsulate and protect the subcell layer 220,for example from decomposition and metal diffusion. Suitable depositiontechniques to form a conformal layer may include chemical vapordeposition (CVD), atomic layer deposition (ALD), solution coating andevaporation. In an embodiment, the conformal transport layer is lessthan 1,000 nm thick, such as less than 150 nm thick, or morespecifically less than 50 nm thick such as 10-40 nm thick. The conformaltransport layer may be doped. For example, the transport layer may beAZO. The conformal transport layer may be sufficiently thin to transportcharge through its thickness, and not be laterally conductive. Theconformal transport layer 240 may be characterized by a resistivitygreater than 0.1 ohm·cm. In an embodiment, the conformal transport layeralso functions as an electron transport layer or hole transport layerfor a solar cell 120. The top electrode layer 250 may be formed usingsuitable deposition technique such as evaporation, sputter, printing,and spraying. In an embodiment, the top electrode layer 250 includes oneor more metal layers, such as Ag, Cu, Al, Au, etc.

Referring now to FIG. 26B at operation 2550 a second patterned lineopening P2 is then formed through the top electrode layer 250, theconformal transport layer 240, and the subcell layer 220. As shown, theP2 may overlap P1, and may be wider than P1. Formation of P2 may alsoremove any subcell layer 220 material from within P1.

A non-metallic intermediate layer 230 may then be formed along one, orboth, sidewalls of P2 as shown in FIG. 26C. Non-metallic intermediatelayer 230 may be formed of the same materials as the non-metallicintermediate layer 230 previously described. Non-metallic intermediatelayer 230 may be formed using a suitable printing technique such as inkjet, extrusion, spraying, etc. In an embodiment such as FIG. 24B, athird patterned line opening P3 may be formed in the non-metallicintermediate layer 230. This may be accomplished through the depositiontechnique. Alternatively this may be accomplished through patterning,such as scribing. This may increase deposition tolerances for thenon-metallic intermediate layer 230. In an embodiment such as FIG. 24A,the non-metallic intermediate layer 230 may be formed along a singlesidewall of P2. In both configurations the non-metallic intermediatelayer 230 can insulate the top electrode layer 250 from the bottomelectrode layer 210 after formation of the plug 270.

Referring to FIG. 26C, at operation 2570 an (electrically) conductiveplug 270 is formed within P2 and on the bottom electrode layer 210. Inthe embodiment of FIG. 24A, it is not necessary to further pattern theconductive plug 270. In the embodiment of FIG. 24B, a third patternedline opening P3 may be formed in the conductive plug 270 to preventshorting across the top electrode layer 250.

The conductive plug 270 may be formed of materials that do not reactwith the absorber layer(s), such as carbon or a carbon/polymer blend,printed ITO nanoparticles or other TCO nanoparticles. The conductiveplug 270 may be formed using a suitable printing technique such as inkjet, extrusion, spraying, etc. so that further patterning is notnecessary. A conductivity of the conductive plug 270 in accordance withembodiments may only be greater than about 0.001 S/cm due to the shortdistance of the interconnection based on the thin film thickness in the0.1-5 μm range. Such a low conductivity can be achieved by a range ofmaterials that do not react with the perovskite such as carbon (bulkconductivity around 1-100 S/cm) and ITO nanoparticles. In an embodiment,the conductive plug 270 includes particles dispersed in a matrix (e.g.polymer matrix). The carbon and/or TCO particles can be mixed into apolymer blend in order to make it easier to suspend the carbon or TCOnanoparticles in a solvent and deposit the interconnects through aprinting technique like ink jet or spraying. Due to the low conductivityrequired, a very high conductive particle to polymer ratio is notrequired. Such a polymer could be a binder like poly(vinylidenefluoride) (PVDF), polyvinyl fluoride, polyvinylchloride, polystyrene,PMMA, PVA, polyvinyl phenol, polyethylene glycol, etc. The carbon may begraphite or carbon black in an embodiment, but could include graphene orcarbon nanotubes or amorphous carbon. The TCO particles may be ITO orIZO nanoparticles with diameters between 10-200 nm in an embodiment, butcould be AZO, Sb:SnO₂, zinc tin oxide, cadmium stannate and could bemicroparticles with diameters between 0.2-2 μm.

In utilizing the various aspects of the embodiments, it would becomeapparent to one skilled in the art that combinations or variations ofthe above embodiments are possible for forming a solar cell module andstable interconnect. Although the embodiments have been described inlanguage specific to structural features and/or methodological acts, itis to be understood that the appended claims are not necessarily limitedto the specific features or acts described. The specific features andacts disclosed are instead to be understood as embodiments of the claimsuseful for illustration.

What is claimed is:
 1. A solar cell serial interconnect comprising: abottom electrode layer; a first patterned line opening in the bottomelectrode layer that separates the bottom electrode layer into a firstbottom electrode layer of a first cell and a second bottom electrodelayer of a second cell; a subcell layer over the bottom electrode layer;a second patterned line opening in the subcell layer that separates thesubcell layer into a first subcell layer of the first cell and a secondsubcell layer of the second cell, the second patterned line openingincluding a first sidewall along the first subcell layer and a secondsidewall along the second subcell layer laterally opposite to the firstsidewall; a non-metallic intermediate layer along the first sidewall andthe second sidewall of the second patterned line opening; a continuousconformal transport layer that spans over the first subcell layer, thesecond subcell layer, on the non-metallic intermediate layer within thesecond patterned line opening, and over the second bottom electrodelayer within the second patterned line opening; a top electrode layerover the continuous conformal transport layer and on the continuousconformal transport layer within the second patterned line opening; anda third patterned line opening in the top electrode layer to separatethe top electrode layer into a first top electrode layer of the firstcell and a second top electrode layer of the second cell; wherein thesecond bottom electrode layer of the second subcell and the first topelectrode layer of the first subcell are serially interconnected.
 2. Thesolar cell serial interconnect of claim 1, wherein the top electrodelayer comprises a metal layer, and the bottom electrode layer comprisesa transparent material.
 3. The solar cell serial interconnect of claim1, wherein the subcell layer includes a perovskite absorber layer. 4.The solar cell serial interconnect of claim 1, wherein the subcell layerincludes a tandem structure including multiple subcells.
 5. The solarcell serial interconnect of claim 4, wherein the continuous conformaltransport layer comprises a material selected from the group consistingof a metal oxide, a metal nitride, and a polymer.
 6. The solar cellserial interconnect of claim 4, wherein the continuous conformaltransport layer is less than 150 nm thick. 7-8. (canceled)
 9. The solarcell serial interconnect of claim 1, wherein the third patterned lineopening does not completely extend through a thickness of the continuousconformal transport layer.
 10. The solar cell serial interconnect ofclaim 1: wherein the third patterned line opening extends through thetop electrode layer, the continuous conformal transport layer, and thesubcell layer; and further comprising a non-electrically conductivematerial filling the third patterning line opening.
 11. The solar cellserial interconnect of claim 1: wherein the third patterned line openingextends through the top electrode layer, the continuous transport layer,and the non-metallic intermediate layer; and further comprising anon-electrically conductive material filling the third patterning lineopening.
 12. The solar cell serial interconnect of claim 1, furthercomprising an opening in the non-metallic intermediate layer thatexposes a top surface the second bottom electrode layer, wherein thenon-metallic intermediate layer comprises an insulator material and thecontinuous conformal transport layer is in direct contact with thesecond bottom electrode layer in the second patterned line opening. 13.The solar cell serial interconnect of claim 1, wherein the non-metallicintermediate layer is less than 10 nm thick.
 14. The solar cell serialinterconnect of claim 13, wherein the non-metallic intermediate layerphysically separates the continuous conformal transport layer from thesecond bottom electrode layer, and the non-metallic intermediate layercomprises a material selected from the group consisting of an insulator,semiconductor, and carbon.
 15. The solar cell serial interconnect ofclaim 1, wherein the second patterned line opening overlaps the firstpatterned line opening.
 16. The solar cell serial interconnect of claim15, further comprising an opening in the non-metallic intermediate layerthat exposes a top surface the second bottom electrode layer, andwherein the continuous conformal transport layer is in direct contactwith the second bottom electrode layer in the second patterned lineopening.
 17. The solar cell serial interconnect of claim 16, wherein thecontinuous conformal transport layer at least partially fills the firstpatterned line opening in the bottom electrode layer. 18-25. (canceled)